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Width: 1.6 mm
Height: 0.85 mm
Length: 2.9 mm
Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 9.2 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.25 W
Id - Continuous Drain Current: 3.5 A
Rds On - Drain-Source Resistance: 45 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
