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Vgs(th): 4 V
Vgs (Max): +22|-6V
Gate Charge (Qg): 106nC
Power consumption: 262W
Technology System: SiCFET(Silicon Carbide)
Drain to Source voltage: 1200V
Continuous drain current: 40A
Input Capacitance (Ciss): 1850pF
Operating temperature range: 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 117mOhm
Drive Voltage (Max Rds On, Min Rds On): 18V
