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Fall Time: 21 ns
Rise Time: 22 ns
Technology: SiC
Unit Weight: 6 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 104 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 262 W
Vgs - Gate-Source Voltage: - 4 V, + 22 V
Typical Turn-On Delay Time: 7 ns
Typical Turn-Off Delay Time: 27 ns
Id - Continuous Drain Current: 70 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 9.4 S
Rds On - Drain-Source Resistance: 30 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 5.6 V
