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Technology: Si
Unit Weight: 83 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 3 S
Rds On - Drain-Source Resistance: 58 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
