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Fall Time: 27 ns, 22 ns
Rise Time: 30 ns, 23 ns
Technology: Si
Unit Weight: 83 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 15.4 nC, 20 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 19 ns, 23 ns
Typical Turn-Off Delay Time: 72 ns, 90 ns
Id - Continuous Drain Current: 6 A, 4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6 S
Rds On - Drain-Source Resistance: 25 mOhms, 46 mOhms
Vds - Drain-Source Breakdown Voltage: 45 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2.5 V
