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Width: 1.7 mm
Height: 0.77 mm
Length: 2 mm
Fall Time: 6 ns, 10 ns
Rise Time: 9 ns, 8 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 1.6 nC, 2.1 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 7 ns, 9 ns
Typical Turn-Off Delay Time: 15 ns, 25 ns
Id - Continuous Drain Current: 1.5 A, 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.5 S, 0.7 S
Rds On - Drain-Source Resistance: 240 mOhms, 390 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V, 30 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V, 2 V
