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Fall Time: 4.1 ns, 13 ns
Rise Time: 7.7 ns, 9.1 ns
Technology: Si
Unit Weight: 771.020 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 4.3 nC, 6.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6 ns, 7.4 ns
Typical Turn-Off Delay Time: 13 ns, 26 ns
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.7 S, 2.5 S
Rds On - Drain-Source Resistance: 46 mOhms, 70 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
