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Fall Time: 38 ns, 137 ns
Rise Time: 4 ns, 62 ns
Technology: Si
Unit Weight: 13.761 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel MOSFET, 1 P-Channel MOSFET
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 150 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V, - 10 V, + 10 V
Typical Turn-On Delay Time: 5 ns, 46 ns
Typical Turn-Off Delay Time: 20 ns, 325 ns
Id - Continuous Drain Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 mS, 120 mS
Rds On - Drain-Source Resistance: 3.8 Ohms, 4.2 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
