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Fall Time: 40 ns
Rise Time: 56 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 24.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 90 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 26 ns
Typical Turn-Off Delay Time: 83 ns
Id - Continuous Drain Current: 26 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 17.7 S
Rds On - Drain-Source Resistance: 110 mOhms
Vds - Drain-Source Breakdown Voltage: 280 V
Vgs th - Gate-Source Threshold Voltage: 3.75 V
