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Width: 5.15 mm
Height: 1.04 mm
Length: 6.15 mm
Fall Time: 23 ns
Rise Time: 18 mOhms
Technology: Si
Unit Weight: 506.600 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 75 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 83 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 43 ns
Typical Turn-Off Delay Time: 50 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 105 S
Rds On - Drain-Source Resistance: 3.5 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
