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STMicroelectronics A1P35S12M3 IGBT Modules ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, so

Name: STMicroelectronics A1P35S12M3 IGBT Modules ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, so
Brand: STMicroelectronics

ManufacturerSTMicroelectronics(View more products from this manufacturer)

ModelA1P35S12M3

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Technology: Si

Unit Weight: 25 g

Configuration: 6-Pack

Mounting Style: Through Hole

Pd - Power Dissipation: 250 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 35 A