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STMicroelectronics SCT10N120 Silicon Carbide MOSFET, Single, N Channel, 12 A, 1.2 kV, 0.5 ohm, HiP247

Name: STMicroelectronics SCT10N120 Silicon Carbide MOSFET, Single, N Channel, 12 A, 1.2 kV, 0.5 ohm, HiP247
Brand: STMicroelectronics

ModelSCT10N120

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No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 150

Transistor Case Style: HiP247

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 200 °C

Continuous Drain Current Id: 12

Mosfet Module Configuration: Single

Drain Source On State Resistance: 690

Gate Source Threshold Voltage Max: 3.5