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STMicroelectronics STGB10H60DF IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Name: STMicroelectronics STGB10H60DF IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed
Brand: STMicroelectronics

ModelSTGB10H60DF

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Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 115 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 20 A