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Technology: Si
Unit Weight: 350 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Pd - Power Dissipation: 62.5 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Continuous Collector Current Ic Max: 10 A
Collector-Emitter Saturation Voltage: 2.75 V
Continuous Collector Current at 25 C: 18 A
