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STMicroelectronics STGF15M65DF2 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss

Name: STMicroelectronics STGF15M65DF2 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
Brand: STMicroelectronics

ModelSTGF15M65DF2

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Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 31 W

Gate-Emitter Leakage Current: +/- 250 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 30 A