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STMicroelectronics STGFW20V60DF IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

Name: STMicroelectronics STGFW20V60DF IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Brand: STMicroelectronics

ManufacturerSTMicroelectronics(View more products from this manufacturer)

ModelSTGFW20V60DF

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Technology: Si

Unit Weight: 7 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 52 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 40 A