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STMicroelectronics STGYA75H120DF2 IGBT Transistors Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT

Name: STMicroelectronics STGYA75H120DF2 IGBT Transistors Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT
Brand: STMicroelectronics

ManufacturerSTMicroelectronics(View more products from this manufacturer)

ModelSTGYA75H120DF2

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Technology: Si

Unit Weight: 4.430 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 750 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 75 A

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 150 A