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Fall Time: 23.6 ns
Rise Time: 9.5 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 62.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 190 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 21.5 ns
Typical Turn-Off Delay Time: 110 ns
Id - Continuous Drain Current: 13.86 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 130 mOhms
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 4 V
