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Fall Time: 1100 ns
Rise Time: 400 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 18 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 60 W
Typical Turn-On Delay Time: 150 ns
Typical Turn-Off Delay Time: 3900 ns
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 3 S
Rds On - Drain-Source Resistance: 200 mOhms
Vds - Drain-Source Breakdown Voltage: 70 V
Vgs th - Gate-Source Threshold Voltage: 3 V