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Fall Time: 350 ns
Rise Time: 470 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Qg - Gate Charge: 18 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 60 W
Id - Continuous Drain Current: 6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 9 S
Rds On - Drain-Source Resistance: 60 mOhms
Vds - Drain-Source Breakdown Voltage: 45 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
