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Fall Time: 45 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 75 V
Qg - Gate Charge: 160 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 250 W
Typical Turn-On Delay Time: 25 ns
Typical Turn-Off Delay Time: 85 ns
Id - Continuous Drain Current: 190 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 3.4 mOhms
Vds - Drain-Source Breakdown Voltage: 75 V
Vgs th - Gate-Source Threshold Voltage: 2 V
