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Fall Time: 31 ns
Rise Time: 25 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: N-Channel Power MOSFET
Qg - Gate Charge: 17 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 94 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 16 ns
Typical Turn-Off Delay Time: 63 ns
Id - Continuous Drain Current: 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 S
Rds On - Drain-Source Resistance: 4.3 Ohms
Vds - Drain-Source Breakdown Voltage: 900 V
Vgs th - Gate-Source Threshold Voltage: 2 V
