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Fall Time: 1.7 ns, 1.8 ns
Rise Time: 8.2 ns, 12 ns
Technology: Si
Unit Weight: 28 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 8.6 nC, 9.6 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 14 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 5.1 ns, 5.8 ns
Typical Turn-Off Delay Time: 14 ns, 20 ns
Id - Continuous Drain Current: 6.6 A, 8.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.1 S, 5.2 S
Rds On - Drain-Source Resistance: 98 mOhms, 168 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
