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Vgs(th): 1.3 V
Vgs (Max): 10V
Gate Charge (Qg): 11.2nC
Power consumption: 1.9W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 12V
Continuous drain current: 3.5A
Input Capacitance (Ciss): 1370pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 10.2mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V
