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Width: 0.64 mm
Height: 0.35 mm
Length: 1 mm
Fall Time: 3.8 ns
Rise Time: 1.5 ns
Technology: Si
Unit Weight: 0.400 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel FemtoFET MOSFET
Qg - Gate Charge: 1.06 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 3.7 ns
Typical Turn-Off Delay Time: 11 ns
Id - Continuous Drain Current: 2.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 180 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 650 mV
