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Fall Time: 8 ns, 8 ns
Rise Time: 40 ns, 40 ns
Technology: Si
Unit Weight: 29.200 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 42.8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 15.6 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns, 10 ns
Typical Turn-Off Delay Time: 25 ns, 25 ns
Id - Continuous Drain Current: 10 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 24 S, 24 S
Rds On - Drain-Source Resistance: 17.3 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
