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Wavelength Range: 400 - 1100 nm
Material: Si
Active Area: Ø250 µm
Bandwidth (-3 dB)(a,b,c): 2 GHz
Input: Flat, AR-Coated Window
Ball Lens Diameter: N/A
Aperture Size: Ø0.13" (Ø3.2 mm)
Signal Output: SMA
Minimum Resistor Load: 50 Ω
Maximum Peak Power: 18 mW
Output Voltaged: 2 V (Max)
Rise Time (tr): 150 ps @ 653 nm, 20%/80%(a,b,c) (Typ.)
Fall Time (tf): 150 ps @ 653 nm, 80%/20%(a,b,c) (Typ.)
Bias Voltage: 12 V
Dark Current(a,e): 35 pA
NEP (Maximum): 9.29 x 10^-15 W/√Hz (@ 730 nm)
Junction Capacitance: 1.73 pF (Max)
Photodiode Element: -
(a) Measured with a specified bias voltage of 12 V.
(b) For a 50 Ω Load
(c) Low battery voltage will result in slower rise times and decreased bandwidth.
(d) A higher output voltage will decrease the bandwidth.
(e) For a 1 MΩ Load
