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Toshiba 2SA1987-O(Q) BJTs - Bipolar Transistors Pb-F POWER TRANSISTOR TO-3PL V=230 PD=180W F=30MHZ

Name: Toshiba 2SA1987-O(Q) BJTs - Bipolar Transistors Pb-F POWER TRANSISTOR TO-3PL V=230 PD=180W F=30MHZ
Brand: Toshiba

Model2SA1987-O(Q)

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Technology: Si

Unit Weight: 9.750 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 180 W

DC Current Gain hFE Max: 160

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 230 V

Continuous Collector Current: - 15 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 55 at - 1 A, - 5 V

Collector- Emitter Voltage VCEO Max: 230 V

Collector-Emitter Saturation Voltage: 1.5 V