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Technology: Si
Unit Weight: 10 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 500
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 200 mV
