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Toshiba 2SC5886A(T6L1,NQ) BJTs - Bipolar Transistors NPN VCE 0.22V 95ns 400 to 1000 hFE 5A

Name: Toshiba 2SC5886A(T6L1,NQ) BJTs - Bipolar Transistors NPN VCE 0.22V 95ns 400 to 1000 hFE 5A
Brand: Toshiba

Model2SC5886A(T6L1,NQ)

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 220 mV