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Gain: 11.5 dB
Technology: Si
Unit Weight: 80 mg
Output Power: 36.5 dBm
Configuration: Single
Mounting Style: SMD/SMT
Operating Frequency: 470 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 20 W
Vgs - Gate-Source Voltage: + 3 V
Id - Continuous Drain Current: 3 A
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 1 V
