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Toshiba HN1C03FU-B,LF BJTs - Bipolar Transistors NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package

Name: Toshiba HN1C03FU-B,LF BJTs - Bipolar Transistors NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package
Brand: Toshiba

ManufacturerToshiba(View more products from this manufacturer)

ModelHN1C03FU-B,LF

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Technology: Si

Unit Weight: 6.800 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 1200

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 25 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 42 mV