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Technology: Si
Unit Weight: 14 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 700
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 300 mV
