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Toshiba MT3S113(TE85L,F) RF Bipolar Transistors RF Bipolar Transistor .1A 800mW

Name: Toshiba MT3S113(TE85L,F) RF Bipolar Transistors RF Bipolar Transistor .1A 800mW
Brand: Toshiba

ModelMT3S113(TE85L,F)

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Technology: SiGe

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 12.5 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

Emitter- Base Voltage VEBO: 600 mV

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 5.3 V