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Toshiba RN1112,LXHF(CT Digital Transistors AUTO AEC-Q NPN Q1BSR=22kO, VCEO=50V, IC=0.1A (SOT-416)

Name: Toshiba RN1112,LXHF(CT Digital Transistors AUTO AEC-Q NPN Q1BSR=22kO, VCEO=50V, IC=0.1A (SOT-416)
Brand: Toshiba

ModelRN1112,LXHF(CT

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Configuration: Single

Qualification: AEC-Q200

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 100 mW

Typical Input Resistor: 22 kOhms

Emitter- Base Voltage VEBO: 5 V

Maximum Operating Frequency: 250 MHz

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 50 V