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Vgs(th): 1 V
Vgs (Max): 8V
Gate Charge (Qg): 24.8nC
Power consumption: 500mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 4.4A
Input Capacitance (Ciss): 1800pF
Operating temperature range: 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 25.8mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.5|4.5V
