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Technology: Si
Unit Weight: 11 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 6.2 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1 W
Vgs - Gate-Source Voltage: - 25 V, + 20 V
Typical Turn-On Delay Time: 65 ns
Typical Turn-Off Delay Time: 93 ns
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 7.1 S
Rds On - Drain-Source Resistance: 45 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
