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Toshiba SSM6L820R,LXHF MOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F

Name: Toshiba SSM6L820R,LXHF MOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F
Brand: Toshiba

ModelSSM6L820R,LXHF

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Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 6.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 8 V, + 12 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 39.1 mOhms, 45 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V