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Toshiba SSM6N813R,LF MOSFETs Small Signal MOSFET Dual N-ch VDSS=100V, VGSS=+/-20V, RDS(a.4.5V)=0.154Ohm, ID=3.5A

Name: Toshiba SSM6N813R,LF MOSFETs Small Signal MOSFET Dual N-ch VDSS=100V, VGSS=+/-20V, RDS(a.4.5V)=0.154Ohm, ID=3.5A
Brand: Toshiba

ModelSSM6N813R,LF

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Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel MOSFET

Qg - Gate Charge: 3.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 360 ns

Typical Turn-Off Delay Time: 670 ns

Id - Continuous Drain Current: 3.5 A

Maximum Operating Temperature: + 175 C

Rds On - Drain-Source Resistance: 112 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V