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Fall Time: 95 ns
Rise Time: 91 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 179 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 47 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 119 ns
Typical Turn-Off Delay Time: 251 ns
Id - Continuous Drain Current: 100 A
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 2.44 mOhms
Vds - Drain-Source Breakdown Voltage: 80 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
