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Width: 4.5 mm
Height: 20 mm
Length: 15.5 mm
Technology: Si
Unit Weight: 4.600 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 105 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 230 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 30.8 A
Rds On - Drain-Source Resistance: 88 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
