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Width: 5.5 mm
Height: 2.3 mm
Length: 6.5 mm
Technology: Si
Unit Weight: 330 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 61 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 93 W
Id - Continuous Drain Current: 40 A
Rds On - Drain-Source Resistance: 18 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
