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Width: 5.5 mm
Height: 2.3 mm
Length: 6.5 mm
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 11 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 80 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 3.7 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 2 Ohms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4.4 V
