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Width: 5.5 mm
Height: 2.3 mm
Length: 6.5 mm
Fall Time: 4 ns
Rise Time: 14 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 11 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 60 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 34 ns
Typical Turn-Off Delay Time: 45 ns
Id - Continuous Drain Current: 5.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 890 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
