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Vgs(th): 2.3 V
Vgs (Max): 20V
Gate Charge (Qg): 4.8nC
Power consumption: 700mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 5.9A
Input Capacitance (Ciss): 300pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 60mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
