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Fall Time: 4 ns, 33 ns
Rise Time: 5 ns, 8 ns
Technology: Si
Unit Weight: 17 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 11.8 nC, 18 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.77 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 12 ns, 25 ns
Typical Turn-Off Delay Time: 17 ns, 126 ns
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 62.8 mOhms, 82.2 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2 V
