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Toshiba TRS8E65F,S1Q Schottky Silicon Carbide Diodes V=650 IF=8A

Name: Toshiba TRS8E65F,S1Q Schottky Silicon Carbide Diodes V=650 IF=8A
Brand: Toshiba

ModelTRS8E65F,S1Q

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Technology: SiC

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 8 A

Ir - Reverse Current: 400 nA

Vf - Forward Voltage: 1.45 V

Ifsm - Forward Surge Current: 69 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V