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Toshiba TRS8V65H,LQ Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 8A DFN8x8

Name: Toshiba TRS8V65H,LQ Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 8A DFN8x8
Brand: Toshiba

ModelTRS8V65H,LQ

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Technology: SiC

Mounting Style: SMD/SMT

If - Forward Current: 8 A

Ir - Reverse Current: 2 uA

Vf - Forward Voltage: 1.2 V

Pd - Power Dissipation: 68 W

Ifsm - Forward Surge Current: 410 A

Vrrm - Repetitive Reverse Voltage: 650 V