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Fall Time: 4.8 ns
Rise Time: 4.6 ns
Technology: GaN
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 8.8 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 21 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 33 ns
Typical Turn-Off Delay Time: 27.4 ns
Id - Continuous Drain Current: 6.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 312 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.8 V
