Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 9.39 mm
Height: 4.7 mm
Length: 9.39 mm
Fall Time: 20 us
Rise Time: 20 us
Output Type: NPN Phototransistor
Unit Weight: 9.210 g
Configuration: 1 Channel
Mounting Style: Through Hole
Isolation Voltage: 1000 Vrms
Number of Channels: 1 Channel
If - Forward Current: 1 mA
Vf - Forward Voltage: 1.5 V
Vr - Reverse Voltage: 2 V
Current Transfer Ratio: 200 %
Pd - Power Dissipation: 300 mW
Maximum Collector Current: 50 mA
Current Transfer Ratio - Max: 1000 %
Current Transfer Ratio - Min: 200 %
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Maximum Collector Emitter Voltage: 40 V
Collector-Emitter Breakdown Voltage: 40 V
Maximum Collector Emitter Saturation Voltage: 300 mV
